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4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
Features
* * * * * * Isolation Test Voltage 5300 VRMS Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179004
A C NC
1 2 3
6B 5C 4E
Agency Approvals
* Underwriters Laboratory File #E52744 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
e3
Pb
Pb-free
Applications
AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection
These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Note: Designing with data sheet is cover in Application Note 45
Order Information
Part 4N35 4N36 4N37 4N38 4N35-X006 4N35-X007 4N35-X009 4N36-X007 4N36-X009 4N37-X006 4N37-X009 Remarks CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 9)
Description
This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/ 4N36/ 4N37/ 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1.
For additional information on the available options refer to Option Information.
Document Number 83717 Rev. 1.5, 27-Jan-05
www.vishay.com 1
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW
Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector current (t 1.0 ms) Power dissipation Test condition Symbol VCEO VEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303,part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm
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Document Number 83717 Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage1) Test condition IF = 10 mA IF = 10 mA, Tamb = - 55 C Reverse current1) Capacitance
1)
Symbol VF VF IR CO
Min 0.9
Typ. 1.3 1.3 0.1 25
Max 1.5 1.7 10
Unit V V A pF
VR = 6.0 V VR = 0, f = 1.0 MHz
Indicates JEDEC registered value
Output
Parameter Collector-emitter breakdown voltage1) 4N36 4N37 4N38 Emitter-collector breakdown voltage1) Collector-base breakdown voltage1) 4N36 4N37 4N38 Collector-emitter leakage current1) 4N36 VCE = 10 V, IF=0 VCE = 60 V, IF = 0 VCE = 30 V, IF = 0, Tamb = 100 C 4N37 4N38 4N35 4N36 4N37 VCE = 60 V, IF = 0, Tamb = 100 C Collector-emitter capacitance
1)
Test condition IC = 1.0 mA
Part 4N35
Symbol BVCEO BVCEO BVCEO BVCEO BVECO
Min 30 30 30 80 7.0 70 70 70 80
Typ.
Max
Unit V V V V V V V V V
IE = 100 A IC = 100 A, IB = 1.0 A 4N35
BVCBO BVCBO BVCBO BVCBO ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO CCE
VCE = 10 V, IF = 0
4N35
5.0 5.0 5.0
50 50 50 50 500 500 500
nA nA nA nA A A A A pF
4N38
6.0 6.0
VCE = 0
Indicates JEDEC registered value
Coupler
Parameter Resistance, input to output1) Capacitance (input-output)
1)
Test condition VIO = 500 V f = 1.0 MHz
Symbol RIO CIO
Min 1011
Typ. 0.5
Max
Unit pF
Indicates JEDEC registered value
Document Number 83717 Rev. 1.5, 27-Jan-05
www.vishay.com 3
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors Current Transfer Ratio
Parameter DC Current Transfer Ratio1) Test condition VCE = 10 V, IF = 10 mA Part 4N35 4N36 4N37 VCE = 10 V, IF = 20 mA VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 C 4N38 4N35 4N36 4N37 4N38
1)
Symbol CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC
Min 100 100 100 20 40 40 40
Typ.
Max
Unit % % % %
50 50 50 30
% % % %
Indicates JEDEC registered value
Switching Characteristics
Parameter Switching
1)
Test condition IC = 2 mA, RL = 100 , VCC = 10 V
Symbol ton, toff
Min
Typ. 10
Max
Unit s
time1)
Indicates JEDEC registered value
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4 1.3
VF - Forward Voltage - V NCTR - Normlized CTR
1.5 TA = -55C TA = 25C
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 TA = 85C
1.0
TA=25C
0.5
NCTR(SAT) NCTR
0.0 0
i4n25_02
1 10 IF - LED Current - mA
100
i4n25_01
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Current
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Document Number 83717 Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
1.5
NCTR - Normalized CTR
Ice - Collector Current - mA
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70C 25C 85C 50C
1.0
TA=50C
0.5
NCTR(SAT) NCTR
0.0 .1 1 10 IF- LED Current - mA 100
IF - LED Current - mA
i4n25_06
i4n25_03
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED Current
Figure 6. Collector-Emitter Current vs. Temperature and LED Current
1.5
NCTR - Normalized CTR
Iceo - Collector-Emitter - nA
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
10 10 10
5 4 3
1.0
TA=70C
10 2 10 10
1 0
Vce = 10 V Typical
0.5
NCTR(SAT) NCTR
10 -1 10 -2 -20 0 20 40 60 80 100
0.0 .1 1 10 IF - LED Current - mA 100
TA - Ambient Temperature - C
i4n25_07
i4n25_04
Figure 4. Normalized Non-saturated and saturated CTR vs. LED Current
Figure 7. Collector-Emitter Leakage Current vs.Temp.
1.5
NCTR - Normalized CTR
NCTRcb - Normalized CTRcb
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V
1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C
1.0
TA=85C
1.0
0.5
NCTR(SAT) NCTR
0.5 25C 50C 70C 0.0 .1 1 10 100
0.0 .1 1 10 IF - LED Current - mA 100
IF - LED Current - mA
i4n25_08
i4n25_05
Figure 5. Normalized Non-saturated and saturated CTR vs. LED Current
Figure 8. Normalized CTRcb vs. LED Current and Temp.
Document Number 83717 Rev. 1.5, 27-Jan-05
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4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
10
tPLH - Propagation Delay - s
1000
2.5
tPHL - Propagation Delay - s
Normalized to: IF=10 mA, TA=25C
Normalized Photocurrent
IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0
1
1 0.
Nib, TA=-20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C
10 tPLH
1.5
0.01 .1
i4n25_09
1 .1
i4n25_12
1.0 1 10 100
1
10
100
RL - Collector Load Resistor - k
IF - LED Current - mA
Figure 9. Normalized Photocurrent vs. IF and Temp.
Figure 12. Propagation Delay vs. Collector Load Resistor
1.2
NHFE - Normalized HFE
70C
IF
1.0 -20C 0.8
25C
tD VO tR tPLH VTH=1.5 V tPHL tS tF
0.6
Normalized to: Ib=20 A, Vce=10 V, TA=25C
0.4
i4n25_10
1
10 100 Ib - Base Current - A
1000
i4n25_13
Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature
Figure 13. Switching Timing
NHFE(sat) - Normalized Saturated HFE
1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C
F=10 KHz, DF=50% VCC = 5.0 V
70C 1.0 25C -20C 0.5
50C
RL VO
Vce=0.4 V 0.0 1 10 100 1000
i4n25_14
IF=1 0 mA
i4n25_11
Ib - Base Current - A
Figure 11. Normalized HFE vs. Base Current and Temp.
Figure 14. Switching Schematic
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Document Number 83717 Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors Package Dimensions in Inches (mm)
For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
14770
DIP-6 Package Dimensions
3 .248 (6.30) .256 (6.50) 4 5 6
ISO Method A
2
1
pin one ID
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
Document Number 83717 Rev. 1.5, 27-Jan-05
www.vishay.com 7
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
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Document Number 83717 Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83717 Rev. 1.5, 27-Jan-05
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